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| MOTOROLA Order Number: MC33486/D Rev. 3.3, 06/2001 Semiconductor Technical Data Advance Information Dual High Side Switch for H-Bridge Automotive Applications This device is a dual high side switch for automotive applications which incorporates a dual low side switch control feature. This device is designed to monitor two low side switches for typical DC-motor control in an H-Bridge configuration. It can be directly interfaced with a microcontroller for control and diagnostic functions, is PWM capable and has a self-adjusted switching speed for minimizing electromagnetic emission. The High Side block incorporates two 15m Rdson N-Channel power Mosfets with senses and a control circuitry. Each output of this high side block is protected against short to gnd and load shorts, and has over temperature detection with hysteresis. It includes a current recopy feature for monitoring the load current. The control circuitry also has an overvoltage detector which turns off the bridge and protects the load in case of Vbat exceeding 28V. The low side control block is able to drive 2 low sides switches in a H-bridge configuration and protects them in case of short circuit. This, in combination with the High side protection, fully protects the H-bridge from shorted loads, shorts to Vbat and shorts to GND. This device offers a very low quiescent current in standby mode. *10 Amps Nominal DC Current *35 Amps Maximum Peak Current *DC Voltage from -0.3V to 40V *Operating Voltage from 8 to 28V *Overvoltage Detection : Switch Off when Vbat Exceed 28V *High Side and Low Side Overcurrent protection *Operating Junction Temperature - 40C to 150C *Rdson 15m max at 25C per Mosfet *DC to 30kHz PWM Capability *Standby Mode with Low Standby Current *Junction to Case Thermal Resistance : 2C/W *ESD protection 2kV *Current Recopy to Monitor the High-Side Current *Common diagnostic output MC33486 DUAL HIGH SIDE SWITCH FOR H-BRIDGE AUTOMOTIVE APPLICATIONS SEMICONDUCTOR TECHNICAL DATA DH SUFFIX HSOP20 Package CASE 979-04 D2PAK D2PAK PIN ASSIGNMENT Vbat 21 Gnd 1 Cur R 2 20 Wake 19 St 18 IN2 17 GLS2 16 OUT2 15 OUT2 14 OUT2 13 OUT2 12 NC 21 Vbat 11 NC IN1 3 GLS1 4 OUT1 5 OUT1 6 OUT1 7 OUT1 8 NC 9 NC 10 Simplified Block Diagram and Typical Application 5V 5V High Side Block VBAT MCU I/O St IN1 IN2 WAKE Cur R GND Control GLS1 OUT1 GLS2 OUT2 M GND Low Side Block This document contains information on a new product. Specifications and information herein are subject to change without notice. TM GND (c) Motorola, Inc., 2001. All rights reserved. MC33486 PINS FUNCTION DESCRIPTION Pin No. Name/Function Description TAB Vbat Supply Voltage The backside TAB is connected to the power supply of the MC33486DH. In addition to its supply function, the tab contributes to the thermal behaviour of the device by conducting the heat from the switching MOSFET to the printed circuit board. Pins 5, 6,7,8 are the source of the output1 15mOhm High-side MOSFET1. Pins 13,14,15 are source of the output 2 15mOhm High-side MOSFET2. They are respectively controlled via the IN1 and IN2 pins. These outputs are current limited and thermally protected These are the device input pins which directly control their associated outputs. The levels are CMOS compatible. When the input is a logic low, the associated output is low (High Side OFF and Low Side ON). Each input pin has an internal active pull down, so that it will not float if disconnected. The Status output is an open drain indication that goes active low when a fault mode (Short to gnd/Vbat, Overtemp) is detected by the device on either one channel or both simultaneously. Its internal structure is an open drain architecture with an internal clamp at 6V. An external pull up resistor connected to Vdd (5V) is needed. See Functional Truth Table. These pins have to be connected to the gate of each Low Side. When the input (INx) is logic High, the associated GLS is grounded to turn off the external FET . This pin is a digital input . When Wake is a logic low, the device's bias current draw is at a minimum. If Wake is a logic high, the part is operationnal. Wake pin has a pull down resistor. The Current Sense pin deliver a ratioed amount (1/3700) of the sum of the High Side currents that can be used to generate signal ground referenced output voltages for use by the microcontroller. These pins are not used. This is the Ground pin of the device. 5,6,7,8 13,14,15,16 3 18 OUT1 OUTPUT Channel 1 OUT 2 OUTPUT Channel 2 IN 1 INPUT Channel 1 IN 2 INPUT Channel 2 St Status for both Channels 19 4 17 20 GLS1 GLS2 Wake 2 Cur R Load Current Sense NC Not Connected GND GROUND 9, 10, 11, 12, 1 Dual High Side Switch for H-Bridge Automotive Applications 2 MC33486 MAXIMUM RATINGS Parameter Power Supply Voltage : Continuous/ Pulse Out1, Out2 to Vbat voltage : Continuous/ Pulse IN1, IN2, Wake, ST Input DC voltage : Continuous/ Pulse IN1, IN2, Wake Input Current ESD all Pins Human Body Model (note1) Machine Model (note2) Output DC Output Current, 1 Channel ON, Ta=85C (note4) Output Current : Pulse (Note 3) THERMAL RATINGS Junction Temperature Storage Temperature Range Thermal resistance junction to case Thermal resistance junction to ambient (Note 4) Power dissipation at Tcase 140C (Note 5) Tj Tst Rthjc Rthja Pd - 40 to +150 - 65 to +150 2 25 5 C C C/W C/W W Symbol Vbat Vout Vin Iin Value - 0.3 to + 40 - 0.3 to + 40 -0.3 to + 7 +/- 5 Unit V V V mA Vesd1 Vesd2 Ioudc +/-2000 +/-200 10 V V A Ioutp 35 A NOTES : 1. ESD1 testing is performed in accordance with the Human Body Model (Czap = 100pF, Rzap = 1500) 2. ESD2 testing is performed in accordance with the Machine Model (Czap = 100pF, Rzap = 0) 3. During load in rush current. 4. Device mounted on dual side printed circuit board with 70m copper thickness and 10cm2 copper heat sink (2.5 cm2 on top side and 7.5 cm2 on down side). 5. Assuming a 150C maximum junction temperature. ELECTRICAL CHARACTERISTICS High Side Block Tj from - 40C to +150C, Vbat from 9V to 16V, unless otherwise noted.Typical values reflect approximate mean at 25C, nominal Vbat, at time of device characterization. Characteristics Description Symbol Min. SUPPLY CHARACTERISTICS Nominal Operating Voltage Vbat 8 28 V Functional to truth table until overvoltage threshold Vbat < 13.5V, wake=0, IN1=IN2=0 No PWM, IN1or IN2=5V, Wake=5V PWM=20kHz, d=50% Typ. Max. Unit Conditions Standby Current Istdby 10 A Supply Current in Operation Mode Ion 9 15 mA Supply Current in Operation Mode STATIC OUTPUT CHARACTERISTICS High Side Drain to Source On Resistance High Side Drain to Source On Resistance High Side Body Diode Voltage (Out to Vbat) Low Side Gate output Voltage Itbd 15 mA Rdson Rdson Vbd Vgs 12 21 15 30 0.7 14 m m V V Iout =5A, Tj = 25C Iout = 5A, Vbat > 9V & Tj = 150C @ Iout=-5A, Tj = 150C Internally clamped Dual High Side Switch for H-Bridge Automotive Applications 3 MC33486 Characteristics Description Symbol Min. INPUTS CHARACTERISTICS IN1, IN2, Wake Input low levels Input high levels Input Hysteresis Logic Input Current Logic Input Current STATUS CHARACTERISTICS Status Voltage Status Leakage Vst Istlk 0.5 10 V A Ist=1mA, output in fault Vst=5V Vil Vih Vhyst Unit Typ. Max. Conditions 1.5 3.5 0.2 1 50 0.6 1 V V V A A IN1 and IN2 pins only Vin = 1.5V Vin = 3.5V Iin Iin OVERLOAD PROTECTION CHARACTERISTICS High Side Output Current Shutdown High Side Overcurrent Shutdown Delay Low Side Overcurrent detection Vout to gnd Ilim tIlim Voutfault 20 35 3 50 20 3 A s V From short to output shutdown If the low side is ON (GLS>4.3V). This is a inferred overcurrent condition 1 2 Low Side Overcurrent detection Vout to gnd Shutdown Delay Thermal Shutdown Thermal Shutdown Hysteresis Under Voltage Shutdown Threshold Under Voltage Shutdown hysteresis Over Voltage Shutdown Threshold Over Voltage Shutdown hysteresis CURRENT RECOPY CHARACTERISTICS Current Recopy Ratio tout-fault 3 10 s C C Tshut Thyst Vuv Vuv-hyst Vov Vov-hyst 150 175 10 6 0.15 27 29 0.15 8 V V 31 V V Cr 3700 Iout from 4A to 8A Tj -40C to 105C Current Recopy Ratio Accuracy Iout from 4A to 8A Iout from 8A to 20A Current Recopy Clamp Voltage Cr-ac -15 -10 6 TBC 9 15 10 11 TBC % Tj <125C Garanteed by design Current mirror=10mA No external resistor on Cur R pin. Vclst V SWITCHING CHARACTERISTICS High Speed Mode to Low Speed Mode transition pulse width Gate Low Side Rise Time Gate Low Side Fall Time tsmod 150 250 350 s s s Tpsrls Tnsrls 3.6 4.9 From 10% to 90% Vout, Load=3 From 90% to 10% Vout, Load=3 HIGH SPEED MODE SWITCHING CHARACTERISTICS (pulse<280s) Dual High Side Switch for H-Bridge Automotive Applications 4 MC33486 Characteristics Description Symbol Min. High Side Positive Slew Rate High Side Negative Slew Rate High Side Turn on Delay Time High Side Turn off Delay Time Thr Thf thdon thdoff Typ. 10 40 2.5 1.5 Max. V/s V/s s s From 10% to 65% Vout, Load=3 From 90% to 35% Vout, Load=3 To 10% Vout, Load=3 To 90% Vout, Load=3 Unit Conditions LOW SPEED MODE SWITCHING CHARACTERISTICS High Side Maximum Output Positive Slew Rate High Side Maximum Output Negative Slew Rate High Side Turn on Delay TIme High Side Turn off Delay Time lr 1.0 V/s From 10% to 65% Vout, Load=3 Tlf 0.5 V/s From 90% to 35% Vout, Load=3 tldon tloff 10 80 s s To 10% Vout, Load=3 To 90% Vout, Load=3 FUNCTIONAL TRUTH TABLE Standard HBridge Conditions In1 X 0 Normal Operation 1 0 1 Undervoltage Overvoltage Overtemp HS1 Overtemp HS2 Overcurrent HS1 Overcurrent HS2 Overcurrent LS1 Overcurrent LS2 X X H In 2 X 0 0 1 1 X X L Wake 0 1 1 1 1 1 1 1 Out1 Z L H L H Z L L Out2 Z L L H H Z L L GLS1 L H L H L L H L GLS2 L H H L L L H L St 1 1 1 1 1 1 1 0 Comment Standby Mode Brake to Ground Direction 1 Direction 2 Not Recommended Note 1 Note 2 Note 2 Note 3 L 1 X X X H X 1 X X 1 1 1 1 1 L Z X Z Z L X Z Z Z L L X L L L X L L L 0 0 0 0 0 Note 3 Note 4 Note 4 Note 5 Note 5 L = `Low level' ; H = `High level' ; X = `don't care' ; Z = `High Impedance' NOTES : 1. It is not recommended to short the motor to Vbat. If in this mode an overvoltage condition occured, this would damaged the DHSB. 2.Once the overvoltage condition or undervoltage condition is removed, the H-Bridge recovers its normal operation mode. 3.When the thermal shutdown is reached on one of the High Side MOSFET, both half bridges are turned off with the motor tied to ground. When the overtemperature condition is finished, the H-bridge recover it previous normal operation mode. 4. The High Side MOSFET HSx which experienced an overcurrent is latched off.The corresponding output OUTx is open. Once the High Side overcurrent condition is removed, the input INx has to to be reset in order to recover the normal operation mode. 5. When a short to Vbat of one of the Low sides occurs, both outputs are opened to prevent the motor from running. Once the Low side overcurrent is removed, the input INx of the half bridge wich experienced the fault has to be reset in order to recover the normal operation mode. Dual High Side Switch for H-Bridge Automotive Applications 5 MC33486 DEVICE DESCRIPTION Introduction DHSB goes back into normal operation mode as soon as the These devices are intended for full H-bridge automotive Vbat rise above the undervoltage threshold. The undervoltage applications. The bridge is partitioned into three blocks, the protection circuitry has hysteresis. DHSB and two low side MOSFETS, each block has a The control circuitry also has an overvoltage detection dedicated package. which turns the Low sides ON and protects the load in case of The DHSB incorporates two 15m ohm N-channel high Vbat exceeding 28V.The gate drivers will also be clamped to side power MOSFETS, high side current sensing , fault 14V to protect the external low side FETs. The Low sides protection and low side gate drivers.The inputs are CMOS remain in the ON state, until the over-voltage condition is compatible, so they can directly interface with a removed. microncontroller. The low side gate drivers control and protect Undervoltage and Overvoltage are not reported on the the two external low sides. When the three blocks are status output. combined the outputs (OUT1 and OUT2) are fully protected against shorts to GND, Shorts to Vbat, shorted loads, over/ Self-adjusted switching speed mode under voltage and over temperature. This feature allows for reduction in EMC and power dissipation depending on the application.The DHSB has two Power supply switching speeds (high and low) depending on the input pulse The device can be directly connected to the power supply width. The high speed condition is active when the delay line. The device has a standby mode (Wake at low logic level) between two consecutive input edges is below 280us. The with a ultra low consumption (10uA max). In operation when low speed mode is active when the delay between two inputs are active, the supply current is up to 20mA. consecutive input edges is above 280us. The 280us delay With the high current and fast switching ability of the corresponds about to a 2kHz frequency with a duty cycle of DHSB it is recommended that sufficient capacitance (tens of 50%. microfarads) be placed between Vbat and gnd of the IC. This will help to insure the power supply stays within the specified limits. Current Recopy This feature provides a current mirror with the ratio of 1/ Reverse battery protection. 3700 of the high side output current. An external resistor must The device cannot sustain more than 1.5V of a reverse be connected to the Cur R pin and then tied to a battery conditions because of the two body diodes of the microcontroller A/D input for analog voltage measurement. power MOSFETs, which are forward biased during a reverse The Cur R pin is internally clamped (Vclst) to protect the MCU battery condition. A specific protection must be implemented. A/D input. Figure 1. i Reverse Battery protection schematic Figure 2. Current Recopy Principle. Sense Power Vbat C MC33486 I copy 1 5000 I load gnd M1 To A/D Cur R + A - M External resistor R MC33486 gnd A reverse battery component might be needed in the gnd pin of the application (i.e diode or Mosfet) in order to achieve both reverse battery and negative transient pulses immunity. If a polarized capacitor is used, it can be placed as shown in Figure 1. . Loss of ground protection As shown in the Figure 1. , a loss of ground has no bad impact on the DHSB, since the ground pin of the device is the same as the ground of the low side. Over/Under Voltage Protection If the battery voltage falls to a level below 8.0V, the outputs are turned low (Low Sides ON) in a low speed mode. The Logic gnd In case a ground shift occurs between the MCU and the DHSB, the amplifier A (see Figure 2. ), will adapt its output to keep the same I copy. Of course the shift has to keep between +/- 1V. Status The device has a single status pins which reports over temperature and/or over current faults. See the Functional Truth Table for all faults that are reported on this signal pin. This pin is an open drain structure and needs an external pull up resistor. Dual High Side Switch for H-Bridge Automotive Applications 6 MC33486 DEVICE DESCRIPTION Overtemperature Protection The maximum peak temperature during the soldering process The DHSB incorporates over-temperature protection. Overshould not exceed 220C (+5C/-0C). The time at maximum temperature detection occurs when an internal high side is in temperature should range from 10 to 40s max. the on state. When an over-temperature condition occurs, Thermal Management both outputs are affected. Both outputs are turned off to The junction to case thermal resistance is 2C/W protect the DHSB from damage (Low sides ON). The maximum. The junction to ambient thermal resistance is overtemperature protection circuitry incorporates hysteresis. dependant on the mounting technology, and if an additional Overtemperature fault condition is reported on the status heat sink is used. One of the most commonly used mounting output. technique consists of using the printed circuit board and the copper lines as heat sink. High side overcurrent protection Figure 2 is an example of printed circuit board layout. It This device incorporates a current shutdown threshold of has a total of 10cm2 additional copper on two sides (2.5 cm2 35A typical. When this limit is reached due to an overload on the top side and 7.5 cm2 on the down side). condition or a short to ground, the faulty output is tri-stated. To Figure 3. .Printed Board Layout Example (not to scale) clear the fault the input (Inx) line needs to return low then on Top side pcb Bottom side pcb the next high transition the output will be enabled. 2 cm2 8 cm2 This information is reported on the status output. Low side block The low side block has control circuitry for two external NChannel power MOSFET's. The low side control circuitry is PWM capable and protects the Low side MOSFETS in case of overcurrent (short to Vbat). This information is reported on the status output. The low side Gate controls are clamped at14V maximum to protect the gates of the Low Sides. During normal operation, the outputs OUT1 and OUT2 are driven by the high side. The low side Gate driver's will only turn on when the Drain voltage (same connection as OUT1 or 2) of the internal high sides is less than 2V, which prevent any cross-conduction in the bridge. Low Side Overcurrent Protection Unlike the high side overcurrent circuitry, this overcurrent protection does not measure the current , but measures the effect of current on the low side through a condition : Vgs > 4.3V and Vds >2V. When this set of conditions occur for at least 8us (blanking time), both outputs OUT1 and OUT2 are tri-stated. The full bridge is tri-stated to prevent the motor for running in case of short to Vbat. As Vgs and Vds are measured in respect to the DHSB's ground pin, it is essential that the low side source are connected to this same ground, in order to prevent false overcurrent detection due to ground shifts. Package The high side block is assembled into a power surface mount package. This package offers high thermal performances, and high current capabilities. It offers 10 pins on each package sides, and one additional connection which is the package heat sink (called pin 21). The heat sink acts as the device power Vbat connection. Soldering Information This device is packaged in a Surface Mount Power package indended to be soldered directly on the Printed Circuit Board. This device was qualified according to JEDEC standards JESD22-A113-B and J-STD-020A with the reflow conditions applicable for packages with thickness above 2.5mm : Convection 220C +5/-0C VPR 215-219C IR / Convection 220C +5/-0C HSOP20 Thermal via from top to down side pcb external pcb (4x4 cm) With the above layout, thermal resistance junction to ambient of 25C/W can be achieved. This value being splitted into : . junction to case : Rthjc = 2C/W . case to ambient : Rthca = 23 C/W. Lower value can be reached with the help of larger and thicker copper metal, higher number of thermal via from top to bottom side pcb and the use of additional thermal via from the circuit board to the module case. Thermal model The junction to ambient thermal resistance of the circuit mounted on a printed circuit board can be splitted into two main parts: junction to case and case to ambient resistances. A simplified steady state model is shown in figure 3 below. Figure 4. Simplified Thermal Model (Electrical Equivalent) Junction Temp Node (Volts represent Die Surface Temperature) Switch Power (W) (1.0A=1W of Power Dissipation) Rthjc Case Temp Node Rthca (1.0=1C/W) Ambient Temp Node (1.0V=1C Ambient Temperature) Dual High Side Switch for H-Bridge Automotive Applications 7 MC33486 The use of this model is similar to the electrical Ohm law (voltage = resistance X current), where: . Voltage represents temperature . Current represents power dissipated by the device . Resistance represents thermal resistance. We finally got : Temperature or delta temperature = Power Dissipation times Thermal resistance, that is : C = W x C/W. Any node temperature can easily be calculated knowing the amount of power flowing through the thermal resistances. Example : 1. Numerical value. . Junction to case thermal resistance : 2C/W (Rthjc) . Power into the switch : assuming the device is driving 8amps at 150C junction temperature (Rdson at 150C is 40m) the total power dissipation is : 0.04*8*8 = 2.56W . Case to ambient thermal resistance (Rthca) : 20C/W 2. Results. . Junction to case delta temp : 5C (2.5W x 2C/W) . Case delta temp from ambient : 50C (20C/W x 2.5W) . Actual junction temperature node will be : 50C + 5C = 55C above the ambient temperature. Assuming an 85C ambient temperature, the junction temperature is a t : 85 + 55 = 140C. The above example take into account the junction to ambient thermal resistance, assuming that the ambient temp is 85C. In the case where the device plus its printed circuit board are located inside a module, the ambient temp of the module should be taken into account. Or an additional thermal resistance from inside module to external ambient temperature must be added. The calculation method remains the same. The low side block is packaged into D2PAK or DPAK package. Thermal resistance junction to case is approx. 2C/W. The junction to ambient thermal resistance follows the same rules as for the high side block, and is in the same range. Dual High Side Switch for H-Bridge Automotive Applications 8 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typical" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or un authorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the parts. Motorola and an Equal Employment Opportunity/Affirmative Action Employer. are registered trademarks of Motorola, Inc. Motorola, Inc. is How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Technical Information Center: 1-800-521-6274 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573 Japan. 81-3-344-3569 ASIA / PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2, Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852-26668334 HOME PAGE: http://www.motorola.com/semiconductors MC33486/D |
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